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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52 NPN medium power transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES * High current (max. 1 A) * Low voltage (max. 35 V). APPLICATIONS * General purpose industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package.
1 handbook, halfpage 2
BFY50; BFY51; BFY52
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 ICM Ptot hFE peak collector current total power dissipation DC current gain BFY50 BFY51 BFY52 fT transition frequency BFY50 BFY51; BFY52 IC = 50 mA; VCE = 10 V; f = 100 MHz 60 50 - - - - MHz MHz Tamb 25 C Tcase 100 C IC = 150 mA; VCE = 10 V 30 40 60 112 123 142 - - - open base - - - - - - - - - - - - 35 30 20 1 800 2.86 V V V A mW W open emitter - - - - - - 80 60 40 V V V CONDITIONS MIN. TYP. MAX. UNIT
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BFY50 BFY51 BFY52 VCEO collector-emitter voltage BFY50 BFY51 BFY52 VEBO IC ICM IBM Ptot emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb 25 C Tcase 25 C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BFY50; BFY51; BFY52
MIN. - - - - - - - - - - - - - -65 - -65
MAX. 80 60 40 35 30 20 6 1 1 100 800 5 2.86 +150 200 +150 V V V V V V V A A
UNIT
mA mW W W C C C
25 C < Tcase < 100 C Tstg Tj Tamb storage temperature junction temperature operating ambient temperature
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to case CONDITIONS VALUE 220 35 UNIT K/W K/W
thermal resistance from junction to ambient in free air
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO BFY50 PARAMETER collector cut-off current IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 100 C IE = 0; VCB = 80 V IE = 0; VCB = 80 V; Tj = 100 C ICBO collector cut-off current BFY51 IE = 0; VCB = 40 V IE = 0; VCB = 40 V; Tj = 100 C IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 100 C ICBO collector cut-off current BFY52 IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 100 C IE = 0; VCB = 40 V IE = 0; VCB = 40 V; Tj = 100 C IEBO emitter cut-off current IC = 0; VEB = 5 V IC = 0; VEB = 5 V; Tj = 100 C IC = 0; VEB = 6 V hFE DC current gain BFY50 IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 1 A; VCE = 10 V hFE DC current gain BFY51 IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 1 A; VCE = 10 V hFE DC current gain BFY52 IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V IC = 1 A; VCE = 10 V CONDITIONS
BFY50; BFY51; BFY52
MIN. - - - - - - - - - - - - - - - 20 30 20 15 30 40 25 15 30 60 30 15
TYP. - - - - - - - - - - - - - - - - - - - - - - - - - - -
MAX. 50 2.5 500 30 50 2.5 500 30 50 2.5 500 30 50 2.5 500 - - - - - - - - - - - -
UNIT nA A nA A nA A nA A nA A nA A nA A nA
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
SYMBOL VCEsat BFY50
PARAMETER collector-emitter saturation voltage
CONDITIONS IC = 10 mA; IB = 1 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA
MIN. - - - - - - - - - - - - - 60 50 - - - - - -
TYP. - - - - - - - - - - - - 7 140 -
MAX. 200 200 700 1 200 350 1 1.6 1.2 1.3 1.5 2 12 - - - - - - - -
UNIT mV mV mV V mV mV V V V V V V pF MHz MHz
VCEsat
collector-emitter saturation voltage BFY51; BFY52 IC = 10 mA; IB = 1 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA
Cc fT
collector capacitance transition frequency BFY50 BFY51; BFY52
IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 C
Switching times (between 10% and 90% levels) ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA 55 15 40 360 300 60 ns ns ns ns ns ns
1997 Apr 22
5
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads
BFY50; BFY51; BFY52
SOT5/11
j B
seating plane wM AMBM
1
b
k
2 3
D1
a A D A L
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 45
0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75
OUTLINE VERSION SOT5/11
REFERENCES IEC JEDEC TO-39 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-11
1997 Apr 22
6
Philips Semiconductors
Product specification
NPN medium power transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFY50; BFY51; BFY52
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Apr 22
7
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 22
Document order number:
9397 750 02081

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